NXP Semiconductors
BAT754L
Schottky barrier triple diode
BAT754L
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? NXP B.V. 2012. All rights reserved
Product data sheet
22 November 2012
4
/
9
006aac830
VF
(V)
0.0
1.2
0.8
0.4
1
10
102
103
IF
(mA)
10-1
(1)
(1)
(2)
(2)
(3)
(3)
(1) Tamb
= 125 °C
(2) Tamb
= 85 °C
(3) Tamb
= 25 °C
Fig. 1.
Forward current as a function of forward
voltage; typical values
aaa-004516
VR
(V)
0
30
20
10
1
10
102
103
IR
(μA)
10-1
(1)
(2)
(3)
(1) Tamb
= 125 °C
(2) Tamb
= 85 °C
(3) Tamb
= 25 °C
Fig. 2.
Reverse current as a function of reverse
voltage; typical values
0
0
10
20
30
5
10
15
VR
(V)
Cd
(pF)
msa891
f = 1 MHz; Tamb
= 25 °C
Fig. 3.
Diode capacitance as a function of reverse voltage; typical values
8.
Test information
8.1
Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
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